Cleaning liquid and method for manufacturing the same

ABSTRACT

A cleaning liquid having an excellent corrosion inhibition function, and a method for manufacturing the same. The cleaning liquid contains alkanol hydroxyamine represented by general formula (1), and a basic compound other than the alkanol hydroxyamine. In the formula, R a1  and R a2  each independently represents a C1-C10 alkyl group having one to three hydroxy groups, or a hydrogen atom, and R a1  and R a2  are not simultaneously a hydrogen atom.

RELATED APPLICATIONS

This application claims priority to Japanese Patent Application No.2016-257442, filed Dec. 29, 2016, and to Japanese Patent Application No.2017-239823, filed Dec. 14, 2017, the contents of which are incorporatedherein by reference.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to a cleaning liquid and a method formanufacturing the same.

Related Art

A semiconductor device is formed by laminating a metal wiring layer, alow dielectric layer, an insulating layer, and the like, on a substrate.Such a semiconductor device is manufactured by processing theabove-mentioned layers by a lithography method of carrying out etchingprocess using a resist pattern as a mask.

A resist film and a temporary laminated film (which is also referred toas a sacrificed film) used in the above-mentioned lithography method, aswell as residues derived from the metal wiring layer and the lowdielectric layer generated in the etching step are removed by using acleaning liquid so as not to hinder the subsequent step and not toaffect the semiconductor device.

Conventionally, as a cleaning liquid to be used in such a manufacturingprocess of a semiconductor device, a cleaning liquid containinghydroxylamine derivative has been proposed (see, for example, PatentDocument 1). Such a cleaning liquid containing hydroxylamine derivativehas been improved in terms of removing performance with respect tovarious residues as compared with the previous cleaning liquids.

Patent Document 1: PCT International Publication No. WO2011/027772

SUMMARY OF THE INVENTION

In recent years, with the tendency toward higher density and higherintegration of a semiconductor device, for example, a wiring formationmethod using a damascene process has been employed. In such a wiringformation method, as metal wiring materials constituting a metal wiringlayer of the semiconductor device, easily corrodible metal, for example,cobalt, copper, and tungsten, with each being in a form of a simplesubstance or an alloy, or silicide such as SiGe, is employed as a metalwiring material for a semiconductor device. Cobalt, copper, tungsten,silicide such as SiGe or other easily corrodible metal to be used as themetal wiring material has a problem of being easily corroded by acleaning liquid. Therefore, a cleaning liquid, which is less likely tocause corrosion on cobalt, copper, tungsten, silicide such as SiGe orother easily corrodible metal in cleaning of a substrate, has beendemanded.

The present invention has been made in view of such conventionalcircumstances, and an object of the present invention is to provide acleaning liquid having an excellent corrosion inhibition function withrespect to at least cobalt, copper, tungsten, silicide such as SiGe orother easily corrodible metal and a method for manufacturing thecleaning liquid.

The present inventors have intensively studied in order to solve theabove-mentioned problem.

As a result, they have found that use of specific alkanol hydroxyamineand a basic compound for a cleaning liquid can solve the above-mentionedproblem, and have completed the present invention. Specifically, thepresent invention provides the following.

A first aspect of the present invention is a cleaning liquid containingalkanol hydroxyamine represented by the following general formula (1)and a basic compound other than the alkanol hydroxyamine.

(In the formula, R^(a1) and R^(a2) each independently represent a C1-C10alkyl group having one to three hydroxy groups, or a hydrogen atom.However, R^(a1) and R^(a2) are not simultaneously a hydrogen atom.)

A second aspect of the present invention is a method for manufacturing acleaning liquid containing alkanol hydroxyamine represented by theabove-mentioned general formula (1) and a basic compound other than thealkanol hydroxyamine. The method includes a synthesis step ofsynthesizing the alkanol hydroxyamine by oxidizing alkanolaminerepresented by the above-mentioned general formula (2); and a blendingstep of blending a reaction product of the synthesis step with the basiccompound.

(In the formula, R^(b1) and R^(b2) each independently represent a C1-C10alkyl group having one to three hydroxy groups, or a hydrogen atom.However, R^(b1) and R^(b2) are not simultaneously a hydrogen atom.)

The present invention can provide a cleaning liquid having an excellentcorrosion inhibition function with respect to at least cobalt, copper,tungsten, silicide such as SiGe or other easily corrodible metal and amethod for manufacturing the cleaning liquid.

DETAILED DESCRIPTION OF THE INVENTION <<Cleaning Liquid>>

A cleaning liquid of the present invention is a composition containingalkanol hydroxyamine represented by the above-mentioned general formula(1) (which may be abbreviated as simply “alkanol hydroxyamine” in thisspecification), and a basic compound other than the alkanol hydroxyamine(which may be abbreviated as simply “basic compound” in thisspecification), and the composition (typically, a liquid composition) issuitable as a cleaning liquid or an anticorrosion agent.

Furthermore, in the cleaning liquid of this embodiment, it is preferablethat R^(a1) and R^(a2) in the above-mentioned general formula (1) arethe same group.

Furthermore, in the cleaning liquid of this embodiment, it is preferablethat the basic compound is at least one selected from the groupconsisting of quaternary ammonium hydroxide, alkanolamine, ahydroxyamine compound other than the alkanol hydroxyamine represented bygeneral formula (1), alkylamine, and ammonia.

Furthermore, the cleaning liquid of this embodiment has pH of preferably8 or more, and more preferably 9 or more. With such a pH range, ingeneral, oxidation-reduction potential of cobalt, copper, tungsten,silicide such as SiGe or other easily corrodible metal, in particular,cobalt tends to be reduced. Conventionally, cobalt has been easilycorroded. However, the cleaning liquid of this embodiment, even when ithas a pH that corresponds to a pH range in which cobalt is corroded, caneffectively remove a substance to be cleaned up while corrosion ofcobalt is inhibited.

Such a cleaning liquid is suitable as a cleaning liquid for electroniccomponents such as a semiconductor device and a liquid crystal display(LCD). The cleaning liquid is suitable as a cleaning liquid used in, forexample, a lithography process, an etching process, an FEOL (Front Endof Line) process such as a chemical mechanical polishing (CMP), a BEOL(Back End of Line) process such as a wiring formation process, and postprocesses such as through-silicon via (TSV) and a C4 process (ControlledCollapse Chip Connection), and the like, in manufacturing process of asemiconductor, and used for cleaning a substrate having metal on asurface thereof. The substrate having metal on a surface thereof is asubstrate on which metal is exposed on at least a part of the substratesurface. Metal is, for example, metal formed as a metal wiring layer, aplug, and other metal constructs on the substrate provided with asemiconductor device. Examples of the substrate include a substrateprovided with a semiconductor device by laminating a metal wiring layer,a low dielectric layer, an insulating layer, and the like, on asubstrate such as a silicon wafer. Moreover, the substrate may be asubstrate having a silicide layer containing, for instance, germanium.The cleaning liquid of this embodiment is suitable for cleaning inlithography or cleaning for lithography, and can be used as a cleaningliquid for lithography.

Examples of the above-mentioned metal include cobalt which is an easilycorrodible metal, an alloy thereof, or the like. Examples of the alloyof cobalt include an alloy with at least one element of other transitionelements and typical elements (for example, phosphorus, boron, silicon,and the like). Specific examples of the alloy include an alloycontaining phosphorus and/or boron, such as CoWPB, and a silicide suchas CoSi. Furthermore, the above-mentioned metal may be another easilycorrodible metal such as copper and tungsten, germanium or an alloythereof. Examples of the alloy include an alloy of at least one ofcopper and tungsten with at least one from other transition elements andtypical elements (for example, phosphorus, boron, silicon, and thelike). Specific examples of the alloy include an alloy containingphosphorus and/or boron, such as CuPB, and a silicide such as WSi orSiGe. When the below-mentioned dialkanol hydroxyamine and dialkanolamineare used, a corrosion inhibition effect can be easily obtained on notonly cobalt but also copper, tungsten and SiGe. Hereinafter, in thisspecification, “cobalt or an alloy thereof,” “copper or an alloythereof” and “tungsten or an alloy thereof” may be abbreviated simply as“cobalt,” “copper” and “tungsten,” respectively.

The cleaning liquid of this embodiment contains alkanol hydroxyamine anda basic compound other than the alkanol hydroxyamine, and thereby has anexcellent corrosion inhibition function with respect to at least cobaltcopper, tungsten, silicide such as SiGe or other easily corrodiblemetal. Therefore, in cleaning the substrate, even when such a cleaningliquid is brought into contact with cobalt copper, tungsten, silicidesuch as SiGe or other easily corrodible metal on the surface of thesubstrate, corrosion of the cobalt, copper, tungsten, silicide such asSiGe or other easily corrodible metal can be satisfactorily inhibited.Although the mechanism of action is not clarified, it is assumed thatthe reduction action of alkanol hydroxyamine inhibit the corrosion ofcobalt, copper, tungsten, silicide such as SiGe or other easilycorrodible metal.

Furthermore, alkanol hydroxyamine represented by the above-mentionedgeneral formula (1) has a lower vapor pressure as compared withalkanolamine represented by the above-mentioned general formula (2).Therefore, even when a temperature of a cleaning liquid is raised to apredetermined temperature to clean, composition change is inhibited, andthus, the alkanol hydroxyamine is useful for a cleaning liquid. Forexample, it is suitable to use alkanol hydroxyamine having a vaporpressure of preferably 0.3 mmHg or less, more preferably 0.1 mmHg orless, and further preferably 0.05 mmHg or less.

Furthermore, since the alkanol hydroxyamine represented by theabove-mentioned general formula (1) has higher water-solubility ascompared with the alkanolamine represented by the above-mentionedgeneral formula (2), low-cost water can be used as a solvent.Furthermore, in cleaning with such an aqueous solution, residues can besuppressed. Thus, alkanol hydroxyamine is useful for a cleaning liquid.For example, it is suitable to use alkanol hydroxyamine having Log P ofpreferably 0.5 or less.

The Log P value means an octanol/water distribution coefficient, and canbe calculated using parameters by Ghose, Pritchett, Crippen et al. (see,J. Comp. Chem., 9, 80 (1998)). This calculation can be performed usingsoftware such as CAChe 6.1 (manufactured by FUJITSU LIMITED).

Hereinafter, each component is described in detail.

<Alkanol Hydroxyamine>

As alkanol hydroxyamine, alkanol hydroxyamine represented by theabove-mentioned general formula (1) is used. In the formula, R^(a1) andR^(a2) each independently represent a C1-C10 alkyl group having one tothree hydroxy groups, or a hydrogen atom. However, R^(a1) and R^(a2) arenot simultaneously a hydrogen atom.

Preferable alkanol hydroxyamine is dialkanol hydroxyamine in whichR^(a1) and R^(a2) are a C1-C10 alkyl group having one to three hydroxygroups. Use of such alkanol hydroxyamine is preferable because acorrosion inhibition effect on not only cobalt but also copper andtungsten, silicide such as SiGe or other easily corrodible metal isobtained.

The number of the hydroxy groups in each of R^(a1) and R^(a2) may be oneor two. With one hydroxy group, the effect of the present invention canbe exhibited sufficiently. When the number of carbon atoms of each alkylgroup in R^(a1) and R^(a2) is 3, the hydroxy group in R^(a1) and R^(a2)may be a primary alcohol or a secondary alcohol; and when the number ofcarbon atoms of each alkyl group in R^(a1) and R^(a2) is 4 to 10, thehydroxy group may be any of a primary alcohol, a secondary alcohol, or atertiary alcohol, but preferably a secondary alcohol.

The C1-C10 alkyl group in R^(a1) and R^(a2) may be any of a linear,branched or cyclic alkyl group, and examples thereof include a methylgroup, an ethyl group, an n-propyl group, an isopropyl group, an n-butylgroup, an isobutyl group, a sec-butyl group, a tert-butyl group, acyclobutyl group, an n-pentyl group, an isopentyl group, a sec-pentylgroup, a tert-pentyl group, a neopentyl group, a 2-methylbutyl group, a1,2-dimethylpropyl group, a 1-ethylpropyl group, a cyclopentyl group, ann-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group,a neohexyl group, a 2-methylpentyl group, a 1,2-dimethylbutyl group, a2,3-dimethylbutyl group, a 1-ethylbutyl group, a cyclohexyl group, ann-heptyl group, an n-octyl group, an n-nonyl group, an n-decyl group,and the like. Among them, a linear or branched C1-C4 alkyl group ispreferable, and an ethyl group, an n-propyl group and an isopropyl groupare particularly preferable.

Specific examples of the linear or branched C1-C4 alkyl group having oneto three hydroxyl groups in R^(a1) and R^(a2) may include a1-hydroxyethyl group, a 2-hydroxyethyl group, a 1,2-dihydroxyethylgroup, a 2,2-dihydroxyethyl group, a 1-hydroxy-n-propyl group, a2-hydroxy-n-propyl group, a 3-hydroxy-n-propyl group, a1,2-dihydroxy-n-propyl group, a 1,3-dihydroxy-n-propyl group, a2,2-dihydroxy-n-propyl group, a 2,3-dihydroxy-n-propyl group, a3,3-dihydroxy-n-propyl group, a 1,2,3-trihydroxy-n-propyl group, a2,2,3-trihydroxy-n-propyl group, a 2,3,3-trihydroxy-n-propyl group, a1-hydroxyisopropyl group, a 2-hydroxyisopropyl group, a1,1-dihydroxyisopropyl group, a 1,2-dihydroxyisopropyl group, a1,3-dihydroxyisopropyl group, a 1,2,3-trihydroxyisopropyl group, a1-hydroxy-n-butyl group, a 2-hydroxy-n-butyl group, a 3-hydroxy-n-butylgroup, a 4-hydroxy-n-butyl group, a 1,2-dihydroxy-n-butyl group, a1,3-dihydroxy-n-butyl group, a 1,4-dihydroxy-n-butyl group, a2,2-dihydroxy-n-butyl group, a 2,3-dihydroxy-n-butyl group, a2,4-dihydroxy-n-butyl group, a 3,3-dihydroxy-n-butyl group, a3,4-dihydroxy-n-butyl group, a 4,4-dihydroxy-n-butyl group, a1,2,3-trihydroxy-n-butyl group, a 1,2,4-trihydroxy-n-butyl group, a1,3,4-trihydroxy-n-butyl group, a 2,2,3-trihydroxy-n-butyl group, a2,2,4-trihydroxy-n-butyl group, a 2,3,3-trihydroxy-n-butyl group, a3,3,4-trihydroxy-n-butyl group, a 2,4,4-trihydroxy-n-butyl group, a3,4,4-trihydroxy-n-butyl group, a 2,3,4-trihydroxy-n-butyl group, a1-hydroxy-sec-butyl group, a 2-hydroxy-sec-butyl group, a3-hydroxy-sec-butyl group, a 4-hydroxy-sec-butyl group, a1,1-dihydroxy-sec-butyl group, a 1,2-dihydroxy-sec-butyl group, a1,3-dihydroxy-sec-butyl group, a 1,4-dihydroxy-sec-butyl group, a2,3-dihydroxy-sec-butyl group, a 2,4-dihydroxy-sec-butyl group, a3,3-dihydroxy-sec-butyl group, a 3,4-dihydroxy-sec-butyl group, a4,4-dihydroxy-sec-butyl group, a 1-hydroxy-2-methyl-n-propyl group, a2-hydroxy-2-methyl-n-propyl group, a 3-hydroxy-2-methyl-n-propyl group,a 1,2-dihydroxy-2-methyl-n-propyl group, a1,3-dihydroxy-2-methyl-n-propyl group, a 2,3-dihydroxy-2-methyl-n-propylgroup, a 3,3-dihydroxy-2-methyl-n-propyl group, a3-hydroxy-2-hydroxymethyl-n-propyl group, a1,2,3-trihydroxy-2-methyl-n-propyl group, a1,3,3-trihydroxy-2-methyl-n-propyl group, a2,3,3-trihydroxy-2-methyl-n-propyl group, a1,3-dihydroxy-2-hydroxymethyl-n-propyl group, a2,3-dihydroxy-2-hydroxymethyl-n-propyl group, a 1-hydroxy-2-methylisopropyl group, a 1,3-dihydroxy-2-methyl isopropyl group, a1,3-dihydroxy-2-hydroxymethyl isopropyl group, and the like. A2-dihydroxyethyl group, a 2-hydroxy-n-propyl group and2-hydroxyisopropyl group are particularly preferable.

The content of alkanol hydroxyamine relative to the total of thecleaning liquid is preferably 0.001 to 10 mass %, more preferably 0.01to 5 mass %, and further preferably 0.01 to 0.5 mass %. When such acontent is employed, a substance to be cleaned up can be effectivelyremoved while corrosion of easily corrodible metal, in particularcobalt, copper, tungsten or silicide such as SiGe is inhibited.

<Basic Compound>

As a basic compound, it is preferable to use at least one selected fromthe group consisting of quaternary ammonium hydroxide, alkanolamine,hydroxyamine compound other than alkanol hydroxyamine represented by theabove-mentioned general formula (1), alkylamine, and ammonia.

[Quaternary Ammonium Hydroxide]

Preferable examples of the quaternary ammonium hydroxide include acompound represented by the following general formula (3).

In the above-mentioned general formula (3), R^(c1) to R^(c4) eachindependently represent a C1-16 alkyl group, a C6-16 aryl group, a C7-16aralkyl group, or a C1-16 hydroxy alkyl group.

Among the compounds represented by the above-mentioned general formula(3), at least one selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetraethyl ammonium hydroxide, tetrapropylammonium hydroxide, tetrabutyl ammonium hydroxide, methyl tripropylammonium hydroxide, methyl tributyl ammonium hydroxide, ethyl trimethylammonium hydroxide, dimethyl diethyl ammonium hydroxide, benzyltrimethyl ammonium hydroxide, hexadecyl trimethyl ammonium hydroxide,and (2-hydroxyethyl)trimethyl ammonium hydroxide is particularlypreferable from the viewpoint of availability. Furthermore, tetramethylammonium hydroxide and tetraethyl ammonium hydroxide are preferable fromthe viewpoint that solubility with respect to a substance to be cleanedup is high and cleaning performance is high.

[Inorganic Base]

Furthermore, as the basic compound, for example, an inorganic base andquaternary ammonium hydroxide may be used in combination. The inorganicbase is preferably hydroxides of alkali metal, for example, potassiumhydroxide, sodium hydroxide, and rubidium hydroxide, and more preferablypotassium hydroxide.

[Alkanolamine]

Examples of alkanolamine include triethanolamine,2-(2-aminoethoxy)ethanol, N,N-dimethyl ethanolamine, N,N-diethylethanolamine, N,N-dibutyl ethanolamine, N-methyl ethanolamine, N-ethylethanolamine, N-butyl ethanolamine, N-methyl diethanolamine,triisopropanol amine, and the like. As alkanolamine, alkanolaminerepresented by the general formula (2) including monoethanolamine,diethanolamine, monoisopropanolamine, and diisopropanolamine may be alsoused.

Note here that when a cleaning liquid is manufactured by a method usingalkanolamine as the basic compound and synthesizing alkanol hydroxyamineby oxidizing the alkanolamine, alkanolamine remaining after thesynthesis carried out is insufficient in quantity. Accordingly, it ispreferable that a basic compound other than alkanolamine is additionallyadded.

[Hydroxyamine Compound]

Examples of hydroxyamine compounds other than alkanol hydroxyaminerepresented by the general formula (1) include alkyl hydroxyamine, forexample, monoalkyl hydroxyamines such as N-methyl hydroxyamine, N-ethylhydroxyamine, N-(tert-butyl)hydroxyamine, and N-propyl hydroxyamine;dialkyl hydroxyamines such as N,N-diethyl hydroxyamine, and N,N-dimethylhydroxyamine; and the like; in addition to hydroxyamine (HO—NH2).

[Alkylamine]

Examples of alkylamine include monoalkylamines such as N-methylamine,N-ethylamine, N-(tert-butyl)amine, and N-propylamine; dialkylamines suchas N,N-diethylamine, N,N-dimethylamine; and the like.

[Other Basic Compounds]

Furthermore, as the basic compound, ammonia can be also used.

The content of the basic compound other than alkanol hydroxyaminerepresented by the above-mentioned general formula (1) is differentdepending on the strength of basicity of the compound, but the contentis preferably 0.5 to 30 mass % and more preferably 1 to 20 mass %relative to the total amount of the cleaning liquid. When such a contentis employed, a substance to be cleaned up can be effectively removedwhile corrosion of easily corrodible metal, in particular cobalt,copper, tungsten or silicide such as SiGe is inhibited. Note here thatwhen the inorganic base is used in combination with quaternary ammoniumhydroxide, the content of the inorganic base is preferably 0.1 mass ppmto 1 mass %, and more preferably 1 mass ppm to 1000 mass ppm relative tothe total amount of the cleaning liquid. When such a content isemployed, a substance to be cleaned up can be effectively removed whilecorrosion of easily corrodible metal, in particular cobalt, copper,tungsten or silicide such as SiGe is inhibited. Furthermore, asmentioned above, when alkanolamine is used as the basic compound, adifferent basic compound other than the alkanolamine is additionallyused, and two or more types of basic compounds are preferably used.

<Solvent>

Furthermore, the cleaning liquid of this embodiment may include asolvent that dissolves alkanol hydroxyamine represented by the generalformula (1) and a basic compound. The solvent is not particularlylimited as long as it can homogeneously dissolve components contained inthe cleaning liquid, and any of water, an organic solvent, and anorganic solvent aqueous solution can be used, and the solvent preferablycontains water. As water, pure water, deionized water, ion exchangedwater, and the like, can be used. The organic solvent may be used aloneor in combination of two or more thereof.

The organic solvent may be a water-soluble organic solvent or ahydrophobic organic solvent, but a water-soluble organic solvent ispreferable. It is preferable that an organic solvent included in asolvent is water-soluble organic solvent from the viewpoint that thesolubility with respect to alkanol hydroxyamine is high, and thewater-soluble organic solvent is not likely to remain on a surface of asubstance to be cleaned up. As the solvent, preferably, water and anorganic solvent are used in combination, and more preferably, water anda water-soluble organic solvent are used in combination. When water anda water-soluble organic solvent are used in combination, the content ofwater relative to the total of water and the water-soluble organicsolvent is preferably 1 to 99 mass %, more preferably 10 to 40 mass %,and further preferably 15 to 30 mass %.

Examples of the water-soluble organic solvent include: sulfoxides suchas dimethylsulfoxide; sulfones such as dimethylsulfone, diethylsulfone,bis(2-hydroxyethyl)sulfone, and tetramethylene sulfone; amides such asN,N-dimethylformamide, N-methylformamide, N,N-dimethylacetamide,N-methylacetamide, and N,N-diethylacetamide; lactams such asN-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone,N-hydroxymethyl-2-pyrrolidone, and N-hydroxyethyl-2-pyrrolidone;lactones such as β-propiolactone, γ-butyrolactone, γ-valerolactone,δ-valerolactone, γ-caprolactone, and ε-caprolactone; imidazolidinonessuch as 1,3-dimethyl-2-imidazolidinone, 1,3-diethyl-2-imidazolidinone,and 1,3-diisopropyl-2-imidazolidinone; polyhydric alcohols such asethylene glycol, propylene glycol, 1,2-butylene glycol, 1,3-butyleneglycol, 2,3-butylene glycol, glycerine, and diethylene glycol; glycolether solvents including glycol monoalkyl ethers such as ethylene glycolmonomethyl ether, ethylene glycol monoethyl ether, ethylene glycolmonopropyl ether, ethylene glycol monobutyl ether, ethylene glycolmonoallyl ether, propylene glycol monomethyl ether, propylene glycolmonoethyl ether, propylene glycol monopropyl ether, propylene glycolmonobutyl ether, 3-methoxy-3-methyl-1-butanol, diethylene glycolmonomethyl ether, diethylene glycol monoethyl ether, diethylene glycolmonopropyl ether, diethylene glycol monobutyl ether, diethylene glycolmonobenzyl ether, dipropylene glycol monomethyl ether, dipropyleneglycol monoethyl ether, dipropylene glycol monopropyl ether, dipropyleneglycol monobutyl ether, triethylene glycol monomethyl ether, triethyleneglycol monoethyl ether, triethylene glycol monopropyl ether, triethyleneglycol monobutyl ether, and tripropylene glycol monobutyl ether; andglycol dialkyl ethers such as ethylene glycol dimethyl ether, diethyleneglycol dimethyl ether, triethylene glycol dimethyl ether, tetraethyleneglycol dimethyl ether, diethylene glycol methyl ethyl ether, anddiethylene glycol diethyl ether; and glycol ester solvents such asethylene glycol monoacetate, ethylene glycol monomethyl ether acetate,ethylene glycol monoethyl ether acetate, and diethylene glycolmonoacetate, and the like.

Among them, a preferable solvent as a water-soluble organic solvent isat least one selected from the group consisting of dipropylene glycolmonomethyl ether (DPM), propylene glycol (PG),3-methoxy-3-methyl-1-butanol, dimethylsulfoxide, propylene glycolmonomethyl ether, propylene glycol monoethyl ether, propylene glycolmonopropyl ether, diethylene glycol monoethyl ether (ethyl diglycol),and diethylene glycol monobutyl ether.

When the water-soluble organic solvent is contained, the content of thewater-soluble organic solvent is preferably 1 to 99 mass %, morepreferably 10 to 85 mass %, and further preferably 30 to 80 mass %relative to the total amount of the cleaning liquid. When such a contentis employed, a substance to be cleaned up can be effectively removedwhile corrosion of easily corrodible metal, in particular cobalt,copper, tungsten, or silicide such as SiGe is inhibited.

<Other Components>

The other components such as a surfactant may be added to the cleaningliquid of this embodiment, to the extent not hindering the effect of thepresent invention. The surfactant is not particularly limited, andexamples thereof include nonionic surfactant, anionic surfactant,cationic surfactant, amphoteric surfactant, and the like.

Furthermore, when the cleaning liquid of this embodiment containsalkanol hydroxyamine represented by the above-mentioned general formula(1) and a basic compound, the cleaning liquid may not need to containother anticorrosion agents, but it may contain other anticorrosionagents. Such other anticorrosion agents are not particularly limited,and examples thereof include nitrogen-containing heterocyclic compoundssuch as benzotriazole, aminotetrazole, 5-amino-1-phenyl tetrazole,5-amino-1-(1-naphthyl)tetrazole, 1-methyl-5-aminotetrazole,1,5-diaminotetrazole, imidazole, indole, purine, pyrazole, pyridine,pyrimidine, pyrrole, pyrrolidine, and pyrroline, and further a secondaryamine compound, an amino acid compound, and the like.

<<Anticorrosion Agent>>

An anticorrosion agent comprising alkanol hydroxyamine represented bythe above-mentioned general formula (1) and a basic compound other thanthe alkanol hydroxyamine is also one of the present invention.

An anticorrosion agent of the present invention is a compositioncomprising alkanol hydroxyamine represented by the above-mentionedgeneral formula (1) and a basic compound other than the alkanolhydroxyamine, and the composition (typically, a liquid composition) issuitable as an anticorrosion agent.

In the anticorrosion agent of this embodiment, it is preferable that thebasic compound other than the alkanol hydroxyamine is at least oneselected from the group consisting of quaternary ammonium hydroxide,alkanolamine, a hydroxyamine compound other than the alkanolhydroxyamine, alkylamine, and ammonia. Furthermore, in the anticorrosionagent of this embodiment, it is preferable that R^(a1) and R^(a2) in theabove-mentioned general formula (1) are the same group.

As mentioned above, when the alkanol hydroxyamine and the basic compoundother than the alkanol hydroxyamine are comprised of the anticorrosionagent of this embodiment, corrosion of metal, in particular cobalt,copper, tungsten, silicide such as SiGe or other easily corrodible metalis effectively inhibited.

<<Method for Manufacturing Cleaning Liquid>>

A method for manufacturing a cleaning liquid of the present invention isa method for manufacturing a cleaning liquid containing alkanolhydroxyamine represented by the above-mentioned general formula (1) anda basic compound. The method includes a synthesis step of synthesizingthe alkanol hydroxyamine by oxidizing alkanolamine represented by theabove-mentioned general formula (2); and a blending step of blending areaction product of the synthesis step with the basic compound. Themethod for manufacturing the cleaning liquid of the present invention issuitable as a method for manufacturing the cleaning liquid of the firstembodiment of the present invention or the anticorrosion agent of theabove-mentioned present invention.

In the general formula (2) that represents alkanolamine as a startingmaterial, R^(b1) and R^(b2) each independently represent a C1-C10 alkylgroup having one to three hydroxy groups, or a hydrogen atom.

A preferable alkanolamine is, as mentioned above, dialkanolamine inwhich R^(b1) and R^(b2) are a C1-C10 alkyl group having one to threehydroxy groups. Use of such alkanolamine is preferable because acorrosion inhibition effect on not only cobalt but also copper andtungsten is obtained.

In the above-mentioned reaction in which alkanolamine is oxidized, ingeneral, R^(b1) in the above-mentioned general formula (2) is the samegroup as R^(a1) in the above-mentioned general formula (1), and R^(b2)in the above-mentioned general formula (2) is the same group as R^(a2)in the above-mentioned general formula (1), since they are not generallysubjected to oxidation, specifically as follows.

The hydroxy group of R^(b1) and R^(b2) are the same as those describedin the hydroxy group of R^(a1) and R^(a2) of the general formula (1).When the number of carbon atoms of each alkyl group in R^(b1) and R^(b2)is 3, and when the number of carbon atoms of each alkyl group in R^(b1)and R^(b2) is 4 to 10, a secondary alcohol is preferably formed.

Examples of the C1-C10 alkyl group in R^(b1) and R^(b2) include the sameas those described in the general formula (1). A linear or branchedC1-C4 alkyl group is preferable, and an ethyl group and an n-propylgroup are particularly preferable.

Specific examples of the linear or branched C1-C4 alkyl group having oneto three hydroxyl groups in R^(b1) and R^(b2) include the same as thosedescribed in the general formula (1). A 2-hydroxyethyl group and a2-hydroxy-n-propyl group are particularly preferable.

Similar to R^(a1) and R^(a2) in the general formula (1), it ispreferable that R^(b1) and R^(b2) in the general formula (2) are thesame group. Furthermore, it is preferable that R^(a1), R^(a2), R^(b1)and R^(b2) are the same group.

Examples of an oxidizing agent for oxidizing alkanolamine includehydrogen peroxide and the like.

An addition amount of the oxidizing agent to alkanolamine is preferably30 to 100 mol % and more preferably 60 to 80 mol % relative to the moleamount of alkanolamine. When such an addition amount is employed it ispossible to generate alkanol hydroxyamine from alkanolamine and toobtain a mixed solution having a high anti-corrosion effect.

A reaction temperature at which alkanolamine is oxidized is, forexample, preferably 40 to 80° C. and more preferably 50 to 70° C.Furthermore, the reaction time is preferably 20 to 120 minutes and morepreferably 30 to 90 minutes. When the oxidation reaction is carried outunder such conditions, it is possible to generate alkanol hydroxyaminefrom alkanolamine and to obtain a mixed solution having a highanti-corrosion effect.

For example, as shown in the following reaction formula, diethanolamineas alkanolamine is oxidized by addition of hydrogen peroxide solution(H₂O₂), whereby 2,2′-(hydroxyimino)bis-ethanol) that is alkanolhydroxyamine can be obtained as a reaction product.

However, in the above-mentioned reaction, it is difficult to oxidize thewhole amount of diethanolamine, thus, the obtained reaction solution islikely to be a mixture of diethanolamine and2,2′-(hydroxyimino)bis-ethanol. The yield of the2,2′-(hydroxyimino)bis-ethanol as the alkanol hydroxyamine is about 25%to 70%, although the yield depends on the reaction conditions.

With the method for manufacturing the cleaning liquid of thisembodiment, a mixture of alkanolamine as a starting material and alkanolhydroxyamine as a reaction product can be easily obtained, and themixture obtained after oxidation reaction can be used as the cleaningliquid of this embodiment, as it is, namely, without isolating andpurifying alkanolamine or alkanol hydroxyamine, thus improvingmanufacturing efficiency. Furthermore, it is possible to obtain acleaning liquid or an anticorrosion agent having a higher anticorrosioneffect as compared with the case where alkanolamine or alkanolhydroxyamine is used alone for a cleaning liquid or an anticorrosionagent. Note here that with this method, alkanolamine becomes a basiccompound and high anticorrosion effect can be exhibited.

<<Cleaning Method>>

A cleaning method using a cleaning liquid of the present invention isalso one of the present invention.

The cleaning method of the present invention is a method for cleaning asubstrate using the above-mentioned cleaning liquid or the cleaningliquid manufactured by the above-mentioned method.

The cleaning of a substrate is suitable as cleaning of a substrate inlithography. For example, the cleaning method of this embodiment is amethod for cleaning an etched substrate as a post step of an etchingmask layer formation step of forming an etching mask layer having apredetermined pattern on a surface of the substrate, and an etching stepof etching the substrate exposed from the above-mentioned etching masklayer. The cleaning method of this embodiment is suitable in a casewhere at least a part of a surface of the substrate is made of cobalt,copper, tungsten, silicide such as SiGe or other easily corrodiblemetal. At this time, at least a part of cobalt, copper, tungsten,silicide such as SiGe or other easily corrodible metal is exposed on thesurface of the substrate, and is brought into contact with the cleaningliquid. However, corrosion of cobalt, copper, tungsten, silicide such asSiGe or other easily corrodible metal is satisfactorily inhibited.Therefore, cleaning using the above-mentioned cleaning liquid permitseffective removal of a substance to be cleaned up while corrosion ofcobalt, copper, tungsten, silicide such as SiGe or other easilycorrodible metal is inhibited.

As mentioned below, in the cleaning method of this embodiment, accordingto the evaluation of the etching speed, the etching speed for cobalt islow as 0.2 nm/min or less, preferably 0.1 nm/min or less, and morepreferably 0.09 nm/min or less, showing a large corrosion inhibitioneffect. Furthermore, similarly, according to the evaluation of theetching speed, the etching speed for copper can be made low as 0.4nm/min or less, preferably 0.2 nm/min or less, and more preferably 0.04nm/min or less, and the corrosion inhibition effect can be expected.Furthermore, similarly, according to the evaluation of the etchingspeed, the etching speed for tungsten can be made low as 0.2 nm/min orless, preferably 0.1 nm/min or less, and more preferably 0.01 nm/min orless, and the corrosion inhibition effect can be expected. Further,similarly, according to evaluation of etching speed, the etching speedfor SiGe can be made low as 0.05 nm/min or less, preferably 0.01 nm/minor less, and the corrosion inhibition effect can be expected. When theabove-mentioned dialkanol hydroxyamine and dialkanolamine are used, thecorrosion inhibition effect can be easily obtained for not only cobaltbut also copper and tungsten, silicide such as SiGe or other easilycorrodible metal.

A specific cleaning method is not particularly limited as long as it isusually carried out. For example, the cleaning method is carried out bybringing a substrate into contact with the above-mentioned cleaningliquid using a dipping method, a paddle method, a shower method, and thelike, for 1 to 40 minutes. Cleaning is carried out usually at roomtemperature, but cleaning may be carried out at an increased temperatureof about 85° C. in order to enhance the cleaning effect.

<<Method for Inhibiting Corrosion>>

As described above, a method for inhibiting corrosion of easilycorrodible metal by using the above-described cleaning liquid oranticorrosion agent, or the cleaning liquid or anticorrosion agentmanufactured according to the above-mentioned method is also one of thepresent invention. The method for inhibiting corrosion comprisesbringing, for instance, cobalt, copper, tungsten, silicide such as SiGe,or other easily corrodible metal (for instance, a substrate having theeasily corrodible metal exposed on the surface) into contact with thecleaning liquid or anticorrosion agent, and specifically, the method canbe carried out in the same manner as the above-mentioned cleaningmethod.

Further, the method for inhibiting corrosion of easily corrodible metalby using the above-mentioned anticorrosion agent or the anticorrosionagent manufactured by the aforementioned method comprises adding theanticorrosion agent to a chemical liquid for lithography such as acleaning liquid, a developer, a rinse, a stripping solution or the likeso that the chemical liquid for lithograph contains the anticorrosionagent; and bringing, for instance, cobalt, copper, tungsten, andsilicide such as SiGe or other easily corrodible metal (for instance, asubstrate having the easily corrodible metal exposed on the surface)into contact with the chemical liquid for lithography. As theaforementioned method for inhibiting corrosion, a cleaning method whichis commonly used in lithography (for instance, the aforementionedcleaning method), such as a developing method, a rinse method or astripping method can be used, depending upon the type or application ofthe chemical liquid for lithography such as a cleaning liquid, adeveloper, a rinse or a stripping solution, to which the anticorrosionagent is added. As the chemical liquid for lithography to which theanticorrosion agent of the present embodiment is added, a cleaningliquid and a developer are preferred. As the developer, an alkalideveloper such as a 2.38% aqueous solution of tetramethyl ammoniumhydroxide (TMAH) can be used.

A chemical liquid for lithography containing the anticorrosion agent ofthe present invention is also one of the present invention. As thechemical liquid for lithography, a cleaning liquid, a developer, arinse, a stripping solution and the like can be exemplified and thecleaning liquid is preferred.

<<Method for Manufacturing Semiconductor>>

A method for manufacturing a semiconductor using a cleaning method ofthe present invention is also one of the present invention.

The method for manufacturing a semiconductor of the present invention isa method for manufacturing a semiconductor including a substrate. Themethod includes cleaning a substrate using the above-mentioned cleaningmethod.

With the method according to this embodiment, as mentioned above, whenat least a part of a surface of the substrate is formed of cobalt,copper, tungsten, silicide such as SiGe or other easily corrodiblemetal, a semiconductor can be manufactured with corrosion of cobalt,copper, tungsten, silicide such as SiGe or other easily corrodible metalinhibited.

<<Method of Lithography>>

A method of lithography comprising using the cleaning method of thepresent invention or the method for inhibiting corrosion of the presentinvention is also one of the present invention. The method forinhibiting corrosion of the present invention may be a method forinhibiting corrosion of easily corrodible metal by using theaforementioned cleaning liquid, the anticorrosion agent or the cleaningliquid or anticorrosion agent manufactured by the aforementioned method.Alternatively, the method for inhibiting corrosion of the presentinvention may be the aforementioned method for inhibiting corrosioncomprising adding the anticorrosion agent to a chemical liquid forlithography such as a cleaning liquid, a developer, a rinse or astripping solution and bringing easily corrodible metal (for instance, asubstrate having the easily corrodible metal exposed on the surface)into contact with the chemical liquid for lithography.

EXAMPLES

Hereinafter, the present invention will be described in more detail withreference to Examples, but the present invention is not limited to theExamples.

[Control Example]

As a control example, a solution including 75.0 mass % of ethyldiglycol, 2.0 mass % of tetramethyl ammonium hydroxide (TMAH), and 23.0mass % of water (remainder) was prepared.

Examples 1 to 4

In Examples, a hydrogen peroxide solution (H₂O₂) was dropped toalkanolamines (monoethanolamine, diethanolamine, monoisopropanolamine,and diisopropanolamine) respectively dissolved in water, in the amountsshown in Table 1, while stirring at 60° C. for 60 minutes. Then,reaction was carried out at 60° C. for one hour further, and then theresultant reaction solutions were respectively added such that theobtained solutions were 0.5 parts by mass with respect to 99.5 parts bymass of solutions as control examples so as to prepare cleaning liquids,respectively.

For example, the composition of the cleaning liquid of Example 1includes 75.0 parts by mass of ethyl diglycol, 2.0 parts by mass oftetramethyl ammonium hydroxide (TMAH), 0.5 parts by mass of theabove-mentioned reaction solution, and 22.5 parts by mass of water(remainder).

As shown in Table 3, it was verified by liquid chromatography massspectrometry (LC-MS) that each reaction solution obtained by adding ahydrogen peroxide solution to alkanolamine in Examples 1 to 4 was amixture of alkanolamine as a starting material and alkanol hydroxylamineas a product of an oxidation reaction.

One example of the analysis results was shown. In the reaction solutionobtained in Example 4, as a result of evaluation by the liquidchromatography mass spectrometry (LC-MS), a peak was observed inpositions at which the m/z value was 134.1172 and 150.1122. From thisresult, it was shown that the reaction solution obtained in Example 4was a mixture of diisopropanolamine as the starting material anddiisopropanol hydroxyamine, in which one hydroxy group was bonded to anitrogen atom, as a product of the oxidation reaction. Furthermore, whenthis reaction solution of Example 4 was evaluated by nuclear magneticresonance apparatus (NMR), it was demonstrated that the molar ratio ofstarting material:reaction product was 59:41. The yield of diisopropanolhydroxyamine was 32.2%.

Example 5

A cleaning liquid was prepared by adding the reaction solution obtainedin Example 4 to a 2.38% aqueous solution of tetramethyl ammoniumhydroxide (TMAH) (NMD-3, manufactured by TOKYO OHKA KOGYO CO., LTD.), inthe ratio of 1.0% by mass to 100% by mass.

Example 6

A cleaning liquid was prepared by adding the reaction solution obtainedin Example 4 to an aqueous solution (NMD-W: manufactured by TOKYO OHKAKOGYO CO., LTD.) containing tetramethyl ammonium hydroxide (TMAH) by2.38% and a surfactant, in the ratio of 1.0% by mass to 100% by mass.

Example 7

A cleaning liquid was prepared by adding 1.0% by mass of the reactionsolution obtained in Example 4 to a mixed solution consisting of 65% bymass of dipropylene glycol monomethyl ether (DPM), 5% by mass ofpropylene glycol (PG), 2.0% by mass of tetramethyl ammonium hydroxide(TMAH) and 28% by mass (balance) of water.

Comparative Examples 1 to 6

In Comparative Examples 1 to 6, as shown in Table 2, 0.5 parts by masseach of mixtures, as comparison control compounds of the anticorrosionagent, which had been obtained by mixing monoethanolamine,diethanolamine, diethylamine, monoisopropanolamine, diisopropanolamine,and dipropylamine, with water, respectively, were added to 99.5 parts bymass of solutions as control examples so as to prepare cleaning liquids,respectively.

Comparative Example 7

In Comparative Example 7, as a comparison control compound of ananticorrosion agent, in an amount shown in Table 1, a hydrogen peroxidesolution (H₂O₂) was dropped to dipropylamine dissolved in water whilestirring at 60° C. for 60 minutes. Then, reaction was carried out at 60°C. for one hour further, and then, the resultant reaction solution wasadded such that the obtained solution was 0.5 parts by mass with respectto 99.5 parts by mass of a solution as a control example so as toprepare a cleaning liquid. The reaction solution obtained in ComparativeExample 7 was a mixture of dipropylamine and dipropyl hydroxyamine asshown in Table 4.

Comparative Example 8

A cleaning liquid was prepared in the same manner as Example 5, exceptthat the reaction solution obtained in Example 4 was not added.

Comparative Example 9

A cleaning liquid was prepared in the same manner as Example 6, exceptthat the reaction solution obtained in Example 4 was not added.

Comparative Example 10

A cleaning liquid was prepared in the same manner as Example 7, exceptthat the reaction solution obtained in Example 4 was not added.

TABLE 1 Comparative Example 1 Example 2 Example 3 Example 4 Example 7Type of amine Monoethanol Diethanol Monoisopropanol DiisopropanolDipropylamine amine amine amine amine Addition Amine 6.1 10.5 7.5 13.310.2 amount H₂O₂ 2.4 2.4 2.4 2.4 2.4 (g) Water 52.7 48.3 51.3 45.5 48.6

TABLE 2 Comparative Comparative Comparative Comparative ComparativeComparative Example 1 Example 2 Example 3 Example 4 Example 5 Example 6Type of amine Monoethanol Diethanol Diethyl MonoisopropanolDiisopropanol Dipropyl amine amine amine amine amine amine AdditionAmine 6.1 10.5 4.5 7.5 13.3 10.2 amount(g) Water 55.1 50.7 56.7 53.747.9 51.0

[Evaluation of Etching Speed to Copper Layer, Tungsten Layer or CobaltLayer]

Copper, tungsten, or cobalt were formed into a film on a siliconsubstrate to obtain a silicon substrate provided with a copper layer, atungsten layer, or a cobalt layer having a thickness of 100 nm. Thesilicon substrate was soaked in a cleaning liquid warmed to 60° C. for60 minutes. After soaking was completed, the silicon substrate wasrinsed with pure water, and then, a film thickness of the copper layer,the tungsten layer, or the cobalt layer was measured. From thedifference between the film thickness before and after soaking, theetching speed of the copper layer, tungsten layer, or cobalt layer wascalculated. Results are shown in Tables 3 and 4.

Evaluation of the etching speed in Tables 3 and 4 are based on thefollowing criteria. Note here that the etching speeds of solutions ofthe control examples were 2.21 for the copper layer, 0.14 for thetungsten layer, and 0.35 for the cobalt layer. Unit of evaluation of theetching speed is “nm/min.”

Copper (Cu)

Very good: 0.2 or less, Good: more than 0.2 and 0.4 or less,Poor: more than 0.4

Tungsten (W)

Very good: 0.1 or less, Good: more than 0.1 and 0.2 or less,Poor: more than 0.2

Cobalt (Co)

Very good: 0.1 or less, Good: more than 0.1 and 0.2 or less,Poor: more than 0.2

TABLE 3 Example 1 Example 2 Example 3 Example 4 AdditiveMonoethanolamine + Diethanolamine + Monoisopropanolamine +Diisopropanolamine + Monoethanol Diethanol Monoisopropanol Diisopropanolhydroxyamine hydroxyamine hydroxyamine hydroxyamine Cu Good Very goodGood Very good (nm/min) W Good Very good Good Very good (nm/min) Co Verygood Very good Good Very good (nm/min)

TABLE 4 Comparative Comparative Comparative Comparative ComparativeComparative Comparative Example 1 Example 2 Example 3 Example 4 Example5 Example 6 Example 7 Additive Monoethanol Diethanol DiethylMonoisopropanol Diisopropanol Dipropyl Dipropyl amine amine amine amineamine amine amine + Dipropyl hydroxyl amine Cu Poor Poor Poor Poor PoorPoor Good (nm/min) W Poor Good Good Poor Good Good Good (nm/min) Co PoorPoor Poor Poor Poor Poor Poor (nm/min)

From the results of Tables 3 and 4, cleaning liquids of each of Examples1 to 4 including a mixed solution of alkanol hydroxyamine andalkanolamine showed lower etching speed and more excellent corrosioninhibition function with respect to cobalt as compared with the cleaningliquids of Comparative Examples 1 to 7 not including alkanolhydroxyamine. Among them, the cleaning liquids of Examples 2 and 4 whichinclude a mixed solution of dialkanol hydroxyamine and dialkanolamineshowed lower etching speed and more excellent corrosion inhibitionfunction with respect to copper and tungsten as compared with cleaningliquids of Comparative Examples 1 to 7. It was verified that alkanolhydroxyamines obtained in Examples had higher Log P values and were moreexcellent in water-solubility as well as had lower vapor pressures andmore excellent composition stability, than amines used in ComparativeExamples.

[Evaluation of Etching Speed to SiGe Layer]

Silicon substrates each having a SiGe layer with a thickness of 100 nmwere soaked in the cleaning liquids (25° C.) of Examples 5 to 7 andComparative Examples 8 to 10 for 10 minutes. After soaking wascompleted, the silicon substrates were rinsed with pure water, and then,film thicknesses of the SiGe layers were measured. From the differencein film thickness before and after soaking, the etching speed of theSiGe layers was calculated. Results are shown in Table 5.

Evaluation of the etching speed in Table 5 is based on the followingcriteria. Unit of evaluation of the etching speed is “nm/min.”

SiGe

Very good: 0.1 or less, o: more than 0.1 and 0.05 or less, x: more than0.05

TABLE 5 Com- Com- Com- parative parative Exam- parative Exam- Exampleple 5 Example 6 Example 7 Example 8 ple 9 10 SiGe Good Very good Verygood Poor Poor Poor (nm/ min)

From the results of Table 5, it was confirmed that cleaning liquids ofExamples 5 to 7 containing the reaction solution which was obtained inExample 4 and which contained a mixed solution of alkanol hydroxyamineand alkanolamine showed lower etching speed and more excellent corrosioninhibition function with respect to SiGe layer as compared to thecleaning liquids of Comparative Examples 8 to 10 which did not containalkanol hydroxyamine(1,1′(hydroxyimino)bis-(2-propanol)).

What is claimed is:
 1. A cleaning liquid comprising alkanol hydroxyaminerepresented by the following general formula (1), and a basic compoundother than the alkanol hydroxyamine:

wherein R^(a1) and R^(a2) each independently represents a C1-C10 alkylgroup having one to three hydroxy groups, or a hydrogen atom, whereR^(a1) and R^(a2) are not simultaneously a hydrogen atom.
 2. Thecleaning liquid according to claim 1, wherein the basic compound is atleast one selected from the group consisting of a quaternary ammoniumhydroxide, an alkanolamine, a hydroxyamine compound other than thealkanol hydroxyamine, an alkylamine, and ammonia.
 3. The cleaning liquidaccording to claim 1, wherein R^(a1) and R^(a2) are the same group. 4.The cleaning liquid according to claim 1, wherein a content of thealkanol hydroxyamine is 0.001 to 1 mass % with respect to the cleaningliquid.
 5. The cleaning liquid according to claim 1, wherein a contentof the basic compound is 1 to 20 mass % with respect to the cleaningliquid.
 6. The cleaning liquid according to claim 1, wherein the pH is 8or more.
 7. A method for manufacturing a cleaning liquid comprisingalkanol hydroxyamine represented by the following general formula (1),and a basic compound other than the alkanol hydroxyamine, the methodcomprising: synthesizing the alkanol hydroxyamine by oxidizingalkanolamine represented by the following general formula (2); andblending a reaction product thus synthesized and the basic compound:

wherein R^(a1) and R^(a2) each independently represents a C1-C10 alkylgroup having one to three hydroxy groups, or a hydrogen atom, whereR^(a1) and R^(a2) are not simultaneously a hydrogen atom;

wherein R^(b1) and R^(b2) each independently represents a C1-C10 alkylgroup having one to three hydroxy groups, or a hydrogen atom, whereR^(b1) and R^(b2) are not simultaneously a hydrogen atom.
 8. A methodfor cleaning a substrate using the cleaning liquid according to claim 1.9. A method for cleaning a substrate comprising using the cleaningliquid manufactured by the method according to claim
 7. 10. The methodaccording to claim 8, wherein the cleaning of a substrate is cleaning ofa substrate in lithography.
 11. A method for manufacturing asemiconductor comprising a substrate, the method comprising cleaning thesubstrate using the method according to claim
 8. 12. A method forinhibiting corrosion of easily corrodible metal, comprising bringing theeasily corrodible metal into contact with the cleaning liquid accordingto claim
 1. 13. A method for inhibiting corrosion of easily corrodiblemetal, comprising bringing the easily corrodible metal into contact withthe cleaning liquid manufactured by the method according to claim 7.